MRFG35020AR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
38
4
16
0
60
Pout, OUTPUT POWER (dBm)
Figure 3. Single--Channel W--CDMA Power Gain
and Drain Efficiency versus Output Power
22
20
12
10
8
6
50
40
30
20
10
η
D
,
DRAIN EFFICIENCY (%)
ηD
G
ps
, POWER GAIN (dB)
24 26 3028
14
Gps
38
-- 5 0
-- 5
Pout, OUTPUT POWER (dBm)
Figure 4. Single--Channel W--CDMA Adjacent
Channel Power Ratio and IRL versus Output Power
22
20
-- 2 0
-- 3 0
-- 4 0
-- 1 0
-- 1 5
-- 2 0
-- 2 5
-- 3 0
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
24 26 3028
0
IRL
ACPR
NOTE:All data is referenced to package lead interface.
ΓS
andΓL
are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
VDS=12Vdc,IDQ
= 300 mA, f = 3500 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
32 34 36
ΓS
= 0.697∠--153.9_,
ΓL
= 0.949∠--166.7_
-- 1 0
32 34 36
ΓS
= 0.697∠--153.9_,
ΓL
= 0.949∠--166.7_
VDS=12Vdc,IDQ
= 300 mA, f = 3500 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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